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?2003 fairchild semiconductor corporation www.fairchildsemi.com rev.1.0.2 features ? quasi resonant converter controller ? internal burst mode controller for stand-by mode ? pulse by pulse current limiting ? over current latch protection ? over voltage protection (vsync: min. 11v) ? internal thermal shutdown function ? under voltage lockout ? internal high voltage sense fet ? auto-restart mode ? primary side regulation description the fairchild po wer switch(fps) product family is specially designed for an off-line smps with minimal external components. the fairchild power switch(fps) consists of a high voltage power sensefet and a current mode pwm ic. the integrated pwm controller includes the fixed oscillator, the under voltage lock out, th e leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shut down protection, the over voltage protection, and the temperature compensated precision current sources for loop compensation and fault protection circuitr y. compared to a discrete mosfet and a controller or a rcc switching converter solutions, a fairchild power swit ch(fps) can reduce the total number of components, design si ze, and weight, so it will improve efficiency, productivity, and system reliability. it has a basic platform well suited fo r cost-effective design in a quasi-resonant converter as a c-tv power supply. to-220f-5l 1. drain 2. gnd 3. v cc 4. feedback 5. sync internal block diagram - + rsense 11v on 12v off 3 1 2 4 vref internal bias s q r leb 450ns s qb r ro n rof f power on reset ovp olp 7.5v - + 12v sync - + - + uvlo 15v/9v 5 burst mode 3.5v/1.25v sync - + r 2.5r - + - + offset thermal shut down s q r power on reset (vcc=6.5v) delay 80ns 1v - + ocl 1v feedback vcc drain source normal mode 4.6v/2.6v osc - + - + idelay ifb vref 32v 1% + - ron roff ka5q0765rth fairchild power switch(fps)
ka5q0765rth 2 absolute maximum ratings (ta=25 c, unless otherwise specified) notes: 1. t j = 25 c to 150 c 2. repetitive rating: pulse width limi ted by maximum junction temperature 3. l = 30mh, v dd = 50v, r g = 25 ? , starting t j = 25 c 4. l = 13uh, starting t j = 25 c parameter symbol value unit drain-gate voltage (r gs =1m ? )v dgr 650 v gate-source (gnd) voltage v gs 30 v drain current pulsed (2) i dm 28 a dc single pulsed avalanch energy (3) e as 370 mj avalanch current (4) i as 17 a continuous drain current (tc = 25c) i d 7a dc continuous drain current (t c =100 c) i d 4.5 a dc supply voltage v cc 40 v analog input voltage range v sync -0.3 to 13v v v fb -0.3 to v cc v total power dissipation p d 45 w operating junction temperature t j +150 c operating ambient temperature t a -25 to +85 c storage temperature range t stg -55 to +150 c thermal resistance r thjc 2.98 c/w
ka5q0765rth 3 electrical characteristics (sfet part) (ta=25 c unless otherwise specified) note: 1. pulse test : pulse width 300 s, duty 2% parameter symbol condition min. typ. max. unit drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 650 - - v zero gate voltage drain current i dss v ds = max, rating, v gs = 0v - - 200 a v ds = 0.8*max., rating v gs = 0v, t c = 85 c --300 a static drain-source on resistance (note) r ds(on) v gs = 10v, i d = 2.3a - 1.4 1.6 ? input capacitance ciss v gs = 0v, v ds = 25v, f = 1mhz - 1415 - pf output capacitance coss - 100 - reverse transfer capacitance crss - 15 - turn on delay time td(on) v dd = 0.5bv dss , i d = 7.0a (mosfet switching time are essentially independent of operating temperature) -25- ns rise time tr - 60 - turn off delay time td(off) - 110 - fall time tf - 65 - total gate charge (gate-source+gate-drain) qg v gs = 10v, i d = 7.0a, v ds = 0.5b v dss (mosfet switching time are essentially independent of operating temperature) -40- nc gate-source charge qgs - 7 - gate-drain (miller) charge qgd - 12 -
ka5q0765rth 4 electrical characteristics (continued) (ta=25 c unless otherwise specified) note: 1. these parameters is the curr ent flowing in the control ic. 2. these parameters, although guaranteed, ar e tested in eds(wafer test) process. 3. these parameters indicate inductor current. parameter symbol condition min. typ. max. unit uvlo section start threshold voltage v start v fb = gnd 14 15 16 v stop threshold voltage v stop v fb = gnd 8 9 10 v sensefet section drain to pkg breakdown voltage bvpkg 60hz ac, ta = 25c 3500 - - v drain to source breakdown voltage bvdss ta = 25c 650 - - v drain to source leakage current idss vdrain = 400v, ta = 25c - - 200 ua oscillator section initial frequency f osc -182022khz voltage stability f stable 12v vcc 23v 0 1 3 % temperature stability (note2) ? f osc -25 c ta 85 c0 510% maximum duty cycle d max -929598% minimum duty cycle d min ---0% feedback section feedback source current i fb v fb = gnd 0.7 0.9 1.1 ma shutdown feedback voltage v sd vfb 6.9v 6.9 7.5 8.1 v shutdown delay current i delay v fb = 5v 4 5 6 a protection section over voltage protection v ovp vsync 11v 11 12 13 v over current latch voltage (note2) v ocl -0.91.01.1v thermal shutdown temp. t sd - 140 160 - c
ka5q0765rth 5 electrical characteristics (continued) (ta=25 c unless otherwise specified) note: 1. these parameters is the curr ent flowing in the control ic. 2. these parameters, although guaranteed, ar e tested in eds(wafer test) process. 3. these parameters indicate inductor current. parameter symbol condition min. typ. max. unit sync section normal sync high threshold voltage v nsh vcc = 16v, vfb = 5v 4.0 4.6 5.2 v normal sync low threshold voltage v nsl vcc = 16v, vfb = 5v 2.3 2.6 2.9 v burst sync high threshold voltage v bsh vcc = 10.5v, vfb = 0v 3.2 3.6 4.0 v burst sync low threshold voltage v bsl vcc = 10.5v, vfb = 0v 1.1 1.3 1.5 v burst mode section burst mode low threshold voltage v burl vfb = 0v 10.4 11.0 11.6 v burst mode high threshold voltage v burh vfb = 0v 11.4 12.0 12.6 v burst mode enable feedback voltage v ben vcc = 10.5v 0.7 1.0 1.3 v burst mode peak current limit i bu_pk vcc = 10.5v 0.65 0.85 1.1 a primary side regulation section primary regulation threshold voltage v pr ifb = 700ua, vfb = 4v 32.0 32.5 33.0 v primary regulation transconductance g pr -2.02.6-ma/v current limit(self-protection)section peak current limit(note3) i pk -4.45.05.6a total device section start up current i start vfb = gnd, v cc = 14v - 0.1 0.2 ma operating supply current (note1) i op vfb = gnd, v cc = 16v -1018ma i op(min) vfb = gnd, v cc = 10v i op(max) vfb = gnd, v cc = 28v
ka5q0765rth 6 typical performance characteristics figure 1. start voltage figure 2. stop voltage figure 3. stand by current figure 4. operating current figure 5. initial frequency figure 6. maximum duty 0.85 0.90 0.95 1.00 1.05 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.80 0.87 0.94 1.01 1.08 -25 0 25 50 75 100 125 150 tem p.(oc) 0.85 0.90 0.95 1.00 1.05 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.85 0.90 0.95 1.00 1.05 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc)
ka5q0765rth 7 typical performance characteristics (continued) figure 7. feedback offset voltage figure 8. feedback source current figure 9. over voltage protection figure 10. shutdown feedback voltage figure 11. shutdown delay current figure 12. burst mode enable feedback voltage 0.00 0.30 0.60 0.90 1.20 1.50 -25 0 25 50 75 100 125 150 tem p.(oc) 0.80 0.88 0.96 1.04 1.12 1.20 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.85 0.90 0.95 1.00 1.05 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.60 0.80 1.00 1.20 1.40 -25 0 25 50 75 100 125 150 tem p.(oc)
ka5q0765rth 8 typical performance characteristics (continued) figure 13. burst mode low threshold voltage figure 14. burst mode high threshold voltage figure 15. burst mode sync. high threshold voltage figure 16. burst mode sync. low threshold voltage figure 17. primary voltage figure 18. primary mode gain 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.80 0.88 0.96 1.04 1.12 1.20 -25 0 25 50 75 100 125 150 tem p.(oc)
ka5q0765rth 9 typical performance characteristics (continued) typical performance char acteristics(mosfet part) figure 19. peak current limit figure 20. burst mode peak current limit figure 21. normal mode sy nc. high threshold voltage figure 21. normal mode sy nc. low threshold voltage 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 25 50 75 100 125 150 0 100 200 300 400 500 avalanche energy e as [mj] channel temperature t ch [] eas-tch 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 1.32 /w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] figure 23. transient thermal response curve figure 22. temperature (t c ) vs. eas curve
ka5q0765rth 10 package dimensions to-220f-5l
ka5q0765rth 11 package dimensions (continued) to-220f-5l(forming)
ka5q0765rth 11/3/03 0.0m 001 stock#dsxxxxxxxx ? 2003 fairchild semiconductor corporation life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain li fe, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. ordering information tu : non forming type ydtu : forming type product number package operating temp. ka5q0765rthtu to-220f-5l -25 c to +85 c KA5Q0765RTHYDTU to- 220f-5l(forming)

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